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US 2026/0088264 A1Published application
Substrate treating apparatus and semiconductor manufacturing equipment including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Yoon LEE, Ji Mo LEE
Life of this patent
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Abstract
A substrate treating apparatus includes a process chamber for treating a substrate, a magnetic field generator spaced apart from an outer surface of the process chamber and applying a first magnetic field to the process chamber, and a magnetic field mask disposed in a space between the process chamber and the magnetic field generator and applying a second magnetic field interfering with the first magnetic field. The magnetic field mask includes a ferromagnetic material.
Claims20
A substrate treating apparatus comprising:
- a process chamber for treating a substrate;
- a magnetic field generator spaced apart from an outer surface of the process chamber and configured to apply a first magnetic field to the process chamber;
- and
- a magnetic field mask disposed in a space between the process chamber and the magnetic field generator and configured to apply a second magnetic field interfering with the first magnetic field,
- wherein the magnetic field mask includes a ferromagnetic material.
2 more elements
Semiconductor manufacturing equipment comprising:
- a process processing module including a plurality of substrate treating apparatuses,
- wherein one of the plurality of substrate treating apparatuses includes:
- a process chamber for treating a substrate;
- a magnetic field generator spaced apart from an outer surface of the process chamber and configured to apply a first magnetic field to the process chamber;
- and
- a magnetic field mask disposed in a space between the process chamber and the magnetic field generator and configured to apply a second magnetic field interfering with the first magnetic field, and
- wherein the magnetic field mask includes a ferromagnetic material.
4 more elements
A substrate treating apparatus comprising:
- a process chamber for treating a substrate;
- a magnetic field generator spaced apart from an outer surface of the process chamber and configured to apply a first magnetic field to the process chamber;
- and
- a magnetic field mask disposed in a space between the process chamber and the magnetic field generator and configured to apply a second magnetic field interfering with the first magnetic field,
- wherein the magnetic field mask includes a ferromagnetic material,
- wherein the ferromagnetic material includes at least one of ferrite, permalloy, and silicon steel,
- wherein the magnetic field mask has a main body and a pattern defined at a surface of the main body,
- wherein the pattern includes at least one of a slit of a shape of a hole extending through the main body, a first groove defined at an upper surface of the main body, and a second groove defined at a lower surface of the main body,
- wherein the pattern is defined in a portion of the surface of the main body,
- wherein the outer surface of the process chamber includes at least one of an upper outer surface, a side outer surface, and a lower outer surface of the process chamber, and
- wherein the substrate treating apparatus is configured to perform one of an etching process, a cleaning process, and a deposition process.
8 more elements
Dependencies are inferred from the claim text.