Read techniques for non-volatile memory

A memory device, comprising:

• a plurality of planes, each of the planes having a plurality of memory blocks, the memory blocks including arrays of memory cells that are arranged in a plurality of word lines;
• and
• circuitry that is configured to read data of the memory cells, the circuitry being configured to;
• receive a read command for a selected memory block of the plurality of planes,
• determine a count of planes of the plurality of planes that have memory blocks undergoing a block activation process, the block activation process including ramping the plurality of word lines to a pass voltage,
• in response to the count being below or equal to a predetermined threshold, begin the block activation process for the selected memory block, and
• in response to the count being above the predetermined threshold, delay the block activation process for the selected memory block until the number of planes that have memory blocks undergoing the block activation process is below the predetermined threshold.

A computing system comprising, comprising:

• at least one non-volatile memory device that includes a plurality of planes, each of the planes having a plurality of memory blocks, the memory blocks including arrays of memory cells that are arranged in a plurality of word lines;
• and
• circuitry that is configured to read data of the memory cells, the circuitry being configured to;
• receive a read command for a selected memory block of the plurality of planes,
• determine a count of planes of the plurality of planes that have memory blocks undergoing a block activation process, the block activation process including ramping the plurality of word lines to a pass voltage,
• in response to the count being below or equal to a predetermined threshold, begin the block activation process for the selected memory block, and
• in response to the count being above the predetermined threshold, delay the block activation process for the selected memory block until the number of planes that have memory blocks undergoing the block activation process is below the predetermined threshold.