Word line zone erase techniques for memory devices

A memory device, comprising:

• a memory block that includes an array of memory cells that are arranged in a plurality of word lines, the word lines being grouped into a plurality of zones based on erase speed characteristics, and at least some of the memory cells being in programmed data states;
• and
• circuitry for erasing the memory cells of the memory block, the circuitry being configured to;
• erase the memory cells of the word lines of a first zone of the plurality of zones using a first type of erase operation;
• and
• erase the memory cells of the word lines of a second zone of the plurality of zones using a second type of erase operation that is different than the first type of erase operation.

An apparatus, comprising:

• a memory block that includes an array of memory cells that are arranged in a plurality of word lines, the word lines being grouped into a plurality of zones based on erase speed characteristics, and at least some of the memory cells being in programmed data states;
• and
• an erasing means for erasing the memory cells of the memory block, the erasing means being configured to;
• erase the memory cells of the word lines of a first zone of the plurality of zones using a first type of stripe erase operation that includes erasing neighboring word lines in separate erase pulses;
• and
• erase the memory cells of the word lines of a second zone of the plurality of zones using a second type of erase operation that is different than the first type of stripe erase operation and includes erasing neighboring word lines in the same erase pulse.