Pre-read operation for multi-pass programming of memory devices

A method comprising:

• causing a first program pass of a multi-pass program operation to partially program one or more memory cells of a memory array to a first program level that is different than a final program level;
• causing a pre-read operation to read data corresponding to the first program pass;
• and
• determining an updated second program voltage of a second program pass of the multi-pass program operation based on the pre-read operation.

A memory device, comprising:

• a memory array;
• and
• control logic, operatively coupled with the memory array, to perform operations comprising:
• causing a first program pass of a multi-pass program operation to partially program one or more memory cells of the memory array to a first program level that is different than a final program level;
• causing a pre-read operation to read data corresponding to the first program pass;
• and
• determining an updated second program voltage of a second program pass of the multi-pass program operation based on the pre-read operation.