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US 2026/0088089 A1Published application
Semiconductor device
OwnerYutaka SHIMIZU, Ryo FUKUDAinventors
Life of this patent
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Abstract
According to some embodiments, a semiconductor device includes a signal input terminal configured to input a signal. The semiconductor device includes a first transistor of a first conductivity type, a second transistor of a second conductivity type, a third transistor of the second conductivity type, a fourth transistor of the second conductivity type. The current capacity of the second transistor and a current capacity of the third transistor are higher than a current capacity of the first transistor.
Claims19
A semiconductor device, comprising:
- a signal input terminal configured to input a signal;
- a first transistor of a first conductivity type comprising a source electrode electrically connected to a first voltage supply line, a drain electrode electrically connected to a first node, and a gate electrode electrically connected to the signal input terminal;
- a second transistor of a second conductivity type comprising a source electrode electrically connected to a second voltage supply line, a drain electrode electrically connected to a second node, and a gate electrode electrically connected to the signal input terminal;
- a third transistor of the second conductivity type comprising a source electrode electrically connected to the second node, a drain electrode electrically connected to the first node, and a gate electrode electrically connected to the signal input terminal;
- and
- a fourth transistor of the second conductivity type comprising a source electrode electrically connected to the second node, a drain electrode electrically connected to the first voltage supply line, and a gate electrode to which a signal of the first node is provided as input;
- wherein a current capacity of the second transistor and a current capacity of the third transistor are higher than a current capacity of the first transistor.
4 more elements
A semiconductor device, comprising:
- a signal input terminal configured to input a signal;
- a first transistor of a first conductivity type comprising a source electrode electrically connected to a first voltage supply line, a drain electrode electrically connected to a first node, and a gate electrode electrically connected to the signal input terminal;
- a second transistor of a second conductivity type comprising a source electrode electrically connected to a second voltage supply line, a drain electrode electrically connected to a second node, and a gate electrode electrically connected to the signal input terminal;
- a third transistor of the second conductivity type comprising a source electrode electrically connected to the second node, a drain electrode electrically connected to the first node, and a gate electrode electrically connected to the signal input terminal;
- a fourth transistor of the second conductivity type comprising a source electrode electrically connected to the second node, a drain electrode electrically connected to the first voltage supply line, and a gate electrode to which a signal of the first node is provided as input;
- a fifth transistor of the first conductivity type comprising a source electrode electrically connected to the first voltage supply line, a drain electrode electrically connected to a third node, and a gate electrode electrically connected to the first node;
- and
- a sixth transistor of the second conductivity type comprising a source electrode electrically connected to the second voltage supply line, a drain electrode electrically connected to the third node, and a gate electrode electrically connected to the first node;
- wherein a current capacity of the second transistor and a current capacity of the third transistor are higher than a current capacity of the sixth transistor.
6 more elements
A semiconductor device, comprising:
- a signal input terminal configured to input a signal;
- a first transistor of a first conductivity type comprising a source electrode electrically connected to a first voltage supply line, a drain electrode electrically connected to a first node, and a gate electrode electrically connected to the signal input terminal;
- a second transistor of a second conductivity type comprising a source electrode electrically connected to a second voltage supply line, a drain electrode electrically connected to a second node, and a gate electrode electrically connected to the signal input terminal;
- a third transistor of the second conductivity type comprising a source electrode electrically connected to the second node, a drain electrode electrically connected to the first node, and a gate electrode electrically connected to the signal input terminal;
- and
- a fourth transistor of the second conductivity type comprising a source electrode electrically connected to the second node, a drain electrode electrically connected to the first voltage supply line, and a gate electrode to which a signal of the first node is provided as input;
- wherein a film thickness of a gate insulating film of the second transistor and a film thickness of a gate insulating film of the third transistor are smaller than a film thickness of a gate insulating film of the first transistor.
4 more elements
Dependencies are inferred from the claim text.