Compute-in-memory arrays

Abstract

Embodiments herein relate to compute-in-memory. In one aspect, memory cells in an array include a larger, primary element and a smaller, secondary element in parallel. The memory cells are phase-change memory (PCM) cells in an example implementation. The second elements are pre-programmed to narrow a conductivity distribution of a column of cells. The pre-programming is based on a measured conductivity distribution of the primary elements of the column. In another aspect, selected memory cells in an array are read using an alternating current (AC) signal which reduces sensing noise. Different bit lines can receive signals with different frequencies and/or amplitudes.

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