Systems and methods for multi-pumping memory with flip-flop interface
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYOSHISATO YOKOYAMA, MASARU HARAGUCHI, YORINOBU FUJINO, TAKUMI HARA
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYOSHISATO YOKOYAMA, MASARU HARAGUCHI, YORINOBU FUJINO, TAKUMI HARA
Estimating the term…
A memory circuit includes a memory array comprising a plurality of memory cells. The memory circuit includes a low-through latch (LL) coupled to a pin and a control line, wherein the control line carries a clock signal. The memory circuit includes a high-through latch (HL) coupled to the LL, the control line, and the memory array. The HL is configured to propagate signals when the clock signal is high and stop propagation of the signals when the clock signal is low. The LL is configured to propagate signals when the clock signal is low and stop propagation of the signals when the clock signal is high.
A memory circuit, comprising:
A memory circuit, comprising:
A method for operating a memory device having a memory array comprising a plurality of memory cells, the method comprising:
Dependencies are inferred from the claim text.