Memory device performing precharge operation and operating method thereof

A memory device comprising:

• cell mats in which a plurality of main word lines are allocated;
• a plurality of main word line drivers configured to drive the plurality of main word lines based on an operating voltage;
• and
• a voltage supply circuit configured to selectively provide a first supply voltage or a second supply voltage, as the operating voltage, to main word line drivers driving main word lines allocated to a cell mat selected by a mat selection signal, according to a landing control signal for performing a soft landing operation for a precharge operation on the plurality of main word lines, the second supply voltage being less than the first supply voltage.

An operating method of a memory device including cell mats in which a plurality of main word lines are allocated, wherein a plurality of sub-word lines are grouped to form one main word line of the plurality of main word lines, the operating method comprising:

• receiving a precharge command;
• providing a first supply voltage to main word lines allocated to a cell mat including a sub-word line selected from the plurality of sub-word lines while first discharging the selected sub-word line from a first voltage level to a second voltage level;
• and
• providing a second supply voltage to main word lines allocated to all cell mats while second discharging the selected sub-word line from the second voltage level to a third voltage level, the second supply voltage being less than the first supply voltage.