Semiconductor memory device

Abstract

According to one embodiment, a semiconductor memory device including multiple first memory cells and a first selection mechanism is provided. The multiple first memory cells are stacked above a substrate. The multiple first memory cells are connected in parallel between a first vertical bit line and a first vertical source line. The first vertical bit line extends in a stacking direction. The first vertical source line extends in the stacking direction. The first selection mechanism is disposed between the substrate and the multiple first memory cells in the stacking direction. The first selection mechanism selectively connects the first vertical bit line to a first local bit line. The first selection mechanism selectively connects the first vertical source line to a first local source line.

Dependencies are inferred from the claim text.