Page program not in order error detection
AssigneeMicron Technology, Inc.
InventorsWai Leong Chin, Yi Lin Lai, Jen Hung Liao, Pinhsueh Lai
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AssigneeMicron Technology, Inc.
InventorsWai Leong Chin, Yi Lin Lai, Jen Hung Liao, Pinhsueh Lai
Estimating the term…
A NAND memory device is modified to include current written page (CWP) and current written block (CWB) variables for each plane. When the CWP and CWB variables are set, the NAND memory device performs an erase page check (EPC) on the indicated page and the previous page. The indicated page should be an empty page, otherwise, when the page is written to, data will be overwritten. The previous page should be a programmed page, otherwise, when the current page is written to, the previous page will be skipped. Page write commands identify the page and block being written to. The NAND memory device compares the page and block of the page write command to the CWP and CWB to confirm that the host system is writing to the correct page.
A memory system comprising:
A method comprising:
A non-transitory machine-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
Dependencies are inferred from the claim text.