Methods of manufacturing a nanoimprint lithography replica mold, a nanoimprint lithography replica, and a semiconductor device

A method of manufacturing a nanoimprint lithography replica, comprising:

• depositing a first resist layer over a substrate;
• exposing the first resist layer to a first patterned actinic radiation,
• wherein the first patterned actinic radiation is patterned by a photomask;
• developing the exposed first resist layer to form a pattern in the first resist layer;
• extending the pattern in the first resist layer into the substrate to form a patterned mold in the substrate;
• inspecting the patterned mold;
• determining whether dimensions of the patterned mold are within design parameters;
• contacting the patterned mold with a second resist layer disposed over a replica blank when the dimensions of the patterned mold are within the design parameters;
• exposing the second resist layer to a second actinic radiation;
• separating the mold and the exposed second resist layer,
• wherein a pattern is formed in the exposed second resist layer;
• extending the pattern in the second resist layer into the replica blank;
• and
• removing the second resist layer from the replica blank to form a replica.

A method of manufacturing a semiconductor device, comprising:

• using photolithography operations to form a mold on a first substrate;
• depositing a first resist layer over a replica blank;
• contacting the first resist layer with the mold;
• exposing the first resist layer to a first actinic radiation passing through the replica blank to form a pattern in the first resist layer,
• wherein the exposing the first resist layer to the first actinic radiation hardens exposed portions of the first resist layer;
• transferring the pattern in the first resist layer into the replica blank to form a replica;
• depositing a second resist layer over a second substrate;
• contacting the replica with the second resist layer;
• exposing the second resist layer to a second actinic radiation passing through the replica to form a pattern in the second resist layer,
• wherein the exposing the second resist layer to actinic radiation hardens exposed portions of the second resist layer;
• and
• transferring the pattern in the second resist layer into the second substrate.