Photolithographic mask pattern generation with optical proximity correction rules determined using scattered data interpolation

An apparatus, comprising:

• at least one processor;
• and
• at least one memory storing instructions that, when executed by the at least one processor, cause the apparatus at least to:
• determine measured error data characterizing one or more deviations in formation of a first subset of a plurality of geometric features in a material layer using a first photolithographic mask device, the first photolithographic mask device having a first mask pattern comprising one or more mask features designed utilizing an optical proximity correction model;
• determine, by performing scattered data interpolation based at least in part on the measured error in the formation of the first subset of the plurality of geometric features, interpolated error data characterizing one or more predicted deviations which would result from formation of a second subset of the plurality of geometric features using the first photolithographic mask device having the first mask pattern;
• generate a rules-based optical proximity correction data structure characterizing the measured error data and the interpolated error data;
• and
• generate a second mask pattern for a second photolithographic mask device utilizing the optical proximity correction model and the generated rules-based optical proximity correction data structure.

A method of fabricating a semiconductor device, comprising:

• generating, utilizing an optical proximity correction model, a first mask pattern for formation of one or more geometric features using a first mask pattern comprising a first set of one or more mask features;
• determining, based at least in part on a rules-based optical proximity correction data structure, one or more adjustments to the first mask pattern to generate a second mask pattern, wherein the rules-based optical proximity correction data structure characterizes one or more predicted deviations which would result from formation of at least one of the one or more geometric features utilizing the first mask pattern, the one or more predicted deviations being determined by performing scattered data interpolation on measured error data;
• and
• forming, utilizing a photolithographic mask device having the second mask pattern, the one or more geometric features in a material layer over a semiconductor substrate.