Gated backend optical interconnects

An integrated circuit (IC) structure, comprising:

• a backend of line (BEOL) layer;
• an optical interconnect in the BEOL layer, wherein the optical interconnect comprises a first dielectric material;
• a first layer comprising a semiconductor material lining sidewalls of at least a portion of the optical interconnect;
• a second layer comprising an electrically conductive material over the first layer;
• a third layer comprising a second dielectric material between the first layer and the second layer;
• and
• a conductive interconnect coupled with the second layer.

A method of fabricating an integrated circuit (IC) structure, the method comprising:

• providing a preliminary IC structure comprising an interconnect layer;
• forming an optical interconnect comprising a first dielectric material over the interconnect layer;
• providing a semiconductor material over sidewalls of the optical interconnect;
• providing a second dielectric material over the semiconductor material;
• and
• providing an electrically conductive material over the second dielectric material.