X-ray measurment system and composite semiconductor inspection system

A composite semiconductor inspection system, comprising:

• a multi-axis sample stage configured to carry a sample to-be-tested;
• at least two X-ray measurement subsystems, each comprising:
• an X-ray generator, comprising:
• an electron beam generator configured to generate an incident electron beam;
• an electromagnetic lens group configured to focus an incident electron beam and simultaneously control a focal position of the incident electron beam;
• an X-ray target material disposed on a target material actuating device, wherein the X-ray target material receives a focused incident electron beam at an incident angle and generates a measurement X-ray beam, the X-ray target material comprises a heat dissipation base material and a plurality of excitation target materials dispersedly embedded in the heat dissipation base material;
• and
• a vacuum cavity configured to house the electron beam generator, the electromagnetic lens group, the target material actuating device, and the X-ray target material, wherein the vacuum cavity is provided with a window through which the measurement X-ray beam passes;
• an X-ray optical element group configured to guide the measurement X-ray beam to the sample to-be-tested;
• an X-ray detector configured to receive an X-ray signal to-be-measured generated when the measurement X-ray beam irradiates the sample to-be-tested and to generate X-ray spectrum information corresponding to the X-ray signal to-be-measured;
• and
• a processing device configured to output a measurement result of the sample to-be-tested based on the X-ray spectrum information generated by at least the two X-ray measurement subsystems.