Shielding compound, method of forming thin film using shielding compound, and semiconductor substrate and semiconductor device fabricated using method

Abstract

The present invention relates to a shielding compound, a method of forming a thin film using the shielding compound, and a semiconductor substrate and semiconductor device fabricated using the method. According to the present invention, by providing a compound having a predetermined structure as a shielding compound and forming a shielding area for a silicon-based thin film on a substrate, the deposition rate of a silicon-based thin film may be reduced, and the thin film growth rate may be appropriately reduced. Thus, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of the thin film may be greatly improved, corrosion or deterioration may be reduced, the crystallinity of the thin film may be improved, and the electrical properties of the thin film may be improved.

Dependencies are inferred from the claim text.