Selective surface passivation and initiated polymerization for area selective deposition

A process of atomic layer deposition (ALD), comprising:

• forming a passivation layer on a metal surface of a substrate, wherein the forming comprises binding metal-selective inhibitor molecules to the metal surface;
• and
• forming a surface-bound polymer film on a dielectric surface of the substrate.

A process of device fabrication, comprising:

• forming a passivation layer on a metal surface of a substrate, wherein the forming comprises binding metal-selective inhibitor molecules to the metal surface;
• and
• forming a surface-bound polymer film on a dielectric surface of the substrate.

A device formed in a process comprising:

• forming a passivation layer on a metal surface of a substrate, wherein the forming comprises binding metal-selective inhibitor molecules to the metal surface;
• and
• forming a surface-bound polymer film on a dielectric surface of the substrate.

A composition for area selective deposition (ASD), comprising a metal-selective inhibitor molecule have the following structure:

• wherein X is a metal-binding group, R is an organic ligand, and n is an integer greater than or equal to zero.