Composition for low-dielectric film, low-dielectric film and manufacturing method thereof

Abstract

A composition for forming a low-dielectric film, comprising a silicon precursor comprising a *—Si—C—Si—* bond and having a ratio of *—Si—C—Si—* bond unit to *—Si—O—* bond unit ratio of 0.1 to 0.8, the low-dielectric film, and the low-dielectric film manufacturing method are provided. A low-dielectric film manufactured using the composition of the present disclosure can implement a low-dielectric film with very high resistance to plasma damage, which could not be implemented using conventional compositions for forming low-dielectric films.

Dependencies are inferred from the claim text.