Magnetic storage device

A magnetic storage device comprising:

• a first magnetic layer;
• a first predetermined element containing layer containing oxygen (O) and containing at least one first predetermined element selected from scandium (Sc), yttrium (Y), titanium (Ti), zirconium (Zr), hafnium (Hf), aluminum (Al), silicon (Si), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), holmium (Ho), dysprosium (Dy), erbium (Er), ytterbium (Yb), and lutetium (Lu);
• a second magnetic layer provided between the first magnetic layer and the first predetermined element containing layer;
• a second predetermined element containing layer provided between the first predetermined element containing layer and the second magnetic layer, wherein the second predetermined element containing layer substantially contains only at least one second predetermined element selected from phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), sulfur(S), selenium (Se), and tellurium (Te);
• and
• a non-magnetic layer provided between the first magnetic layer and the second magnetic layer.