Method and system for handling radiation in long-wavelength and far infrared range

An optoelectronic device, comprising a gapped graphene system (GGS), a top gate electrode, a bottom gate electrode, a cooling system configured to cool said GGS, and a controller configured for applying a voltage bias between said gate electrodes to induce excitons and effect a bandgap in said GGS, wherein said voltage bias is selected to electrically tune said excitons to ensure that said bandgap allows said GGS to receive or emit light having a frequency within the range of from about 0.5 THz to about 35 THz.