Resistive random access memory based one-time-programmable memory devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Cheng Chou, Yu-Der Chih
Life of this patent
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Cheng Chou, Yu-Der Chih
Estimating the term…
A memory device includes a first memory array including a plurality of first memory bits. Each of the plurality of first memory bits is configured as a one-time-programmable (OTP) memory bit. A second memory array includes a plurality of second memory bits, each of the plurality of second memory bits being configured as a multi-time-programmable (MTP) memory bit. A lock bit circuit operatively coupled to the first memory array and not the second memory array. The lock bit circuit is configured to generate a lock bit indicative of whether at least one of the plurality of first memory bits has been programmed.
A memory device, comprising:
A memory device, comprising:
A method for operating a memory device, comprising:
Dependencies are inferred from the claim text.