Semiconductor device with interposer and method therefor

A semiconductor device comprising:

• an interposer including:
• an interposer substrate, and
• a plurality of conductive vias formed through the interposer substrate, a first end of each conductive via exposed at a first major side of the interposer substrate and a second end of each conductive via exposed at a second major side of the interposer;
• a semiconductor die mounted on the first major side of the interposer substrate;
• an encapsulant encapsulating the semiconductor die and portions of the first major side of the interposer substrate;
• and
• a redistribution layer (RDL) structure formed over the second major side of the interposer substrate, the semiconductor die interconnected with the RDL structure by way of the interposer.

A method comprising:

• forming an interposer including:
• an interposer substrate,
• a plurality of cavities formed in a first major side of the interposer substrate, and
• a conductive via formed in each cavity of the plurality of cavities, a first end of the conductive via exposed at the first major side of the interposer substrate;
• mounting a semiconductor die on the first major side first major side of the interposer substrate, the semiconductor die including a plurality of bond pads;
• encapsulating with an encapsulant the semiconductor die and portions of the first major side of the interposer substrate;
• grinding a second major side of the interposer substrate to expose a second end of each conductive via at the second major side first of the interposer substrate;
• and
• forming a redistribution layer (RDL) structure over the second major side of the interposer substrate, the semiconductor die interconnected with the RDL structure by way of the interposer.