Method of manufacturing semiconductor package

A method of manufacturing a semiconductor package, the method comprising:

• forming a plurality of redistribution pads on a redistribution structure;
• forming a preliminary seed layer conformally extending on an upper surface of the redistribution structure, and on upper surfaces and side surfaces of the redistribution pads;
• forming metal pillars on the preliminary seed layer, the metal pillars having respective cross-sectional areas less than those of the plurality of redistribution pads;
• forming surface roughness on side surfaces of the metal pillars;
• and
• providing a plurality of seed layers between the plurality of redistribution pads and the metal pillars, by etching the preliminary seed layer to expose the upper surface of the redistribution structure and a portion of the upper surface and side surfaces of the plurality of redistribution pads,
• wherein the plurality of redistribution pads comprise copper (Cu), nickel (Ni), and gold (Au) sequentially stacked between the redistribution structure and an adhesive layer, and the plurality of seed layers comprise titanium (Ti) and Cu sequentially stacked.

A method of manufacturing a semiconductor package, the method comprising:

• forming a plurality of redistribution pads respectively comprising copper (Cu), nickel (Ni), and gold (Au) sequentially stacked on a redistribution structure comprising a redistribution via and a redistribution line;
• forming a preliminary seed layer conformally extending on an upper surface of the redistribution structure, and on upper surfaces and side surfaces of the plurality of redistribution pads, the preliminary seed layer comprising a first layer comprising titanium (Ti) and a second layer comprising copper (Cu) sequentially stacked;
• forming a metal pillar having a cross-sectional area less than those of the plurality of redistribution pads on the preliminary seed layer;
• performing a Czochralski (CZ) process on the metal pillar;
• removing portions of the preliminary seed layer such that a portion thereof remains between one of the plurality of redistribution pads and the metal pillar as a seed layer;
• mounting at least one semiconductor chip on the redistribution structure;
• and
• forming a molding layer in a space between the at least one semiconductor chip and the metal pillar.