Bonded structure, semiconductor device, and bonding method
AssigneeRohm Co., Ltd.
InventorOji SATO
Life of this patent
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Abstract
A bonding structure includes a first member and a second member. The first member includes a first layer mainly composed of a first metal. The second member includes a second layer mainly composed of a second metal different from the first metal. In the bonding structure, the first layer of the first member and the second layer of the second member are solid-phase bonded. As an example, the first metal is Cu, and the second metal is Ag. As another example, the first metal is Cu, and the second metal is Au. As a still another example, the first metal is Au, and the second metal is Ag.
Claims15
A bonding structure comprising:
- a first member including a first layer mainly composed of a first metal;
- and
- a second member including a second layer mainly composed of a second metal different from the first metal, wherein
- the first layer of the first member and the second layer of the second member are solid-phase bonded.
A bonding method comprising:
- preparing a first member including a first layer mainly composed of a first metal, and a second member including a second layer mainly composed of a second metal different from the first metal;
- and
- solid-phase bonding the first layer of the first member and the second layer of the second member.
Dependencies are inferred from the claim text.