Device including substrate with embedded component

A device comprising:

• an integrated device;
• and
• a substrate electrically coupled to the integrated device, the substrate comprising:
• a multilayer dielectric-metal structure including one or more sidewalls that define an embedding region within the multilayer dielectric-metal structure, the multilayer dielectric-metal structure including:
• first metal layers patterned to define first metal lines;
• and
• first dielectric layers;
• a first component disposed within the embedding region;
• a first photoimageable dielectric (PID) layer coupled to a first surface of the multilayer dielectric-metal structure and to a first surface of the first component, wherein the first surface of the multilayer dielectric-metal structure is adjacent to the one or more sidewalls of the multilayer dielectric-metal structure;
• a second PID layer coupled to a second surface of the multilayer dielectric-metal structure and to a second surface of the first component, wherein the second surface of the multilayer dielectric-metal structure is adjacent to the one or more sidewalls of the multilayer dielectric-metal structure and is opposite the first surface of the multilayer dielectric-metal structure;
• and
• a first metal structure including a portion in contact with at least one of the one or more sidewalls of the multilayer dielectric-metal structure and at least one sidewall of the first component, wherein the portion of the first metal structure is electrically coupled to the first component and the first metal lines.

A method of fabrication comprising:

• positioning a first component within an opening of an embedding region defined by one or more sidewalls of a multilayer dielectric-metal structure, wherein the multilayer dielectric-metal structure includes first metal layers patterned to define first metal lines and first dielectric layers;
• forming a photoimageable dielectric (PID) layer on the one or more sidewalls of the multilayer dielectric-metal structure and on one or more sidewalls of the first component;
• forming a first metal structure including a portion in contact with at least one of the one or more sidewalls of the multilayer dielectric-metal structure and at least one of the one or more sidewalls of the first component, wherein the portion of the first metal structure is electrically coupled to the first component and the first metal lines;
• and
• forming one or more additional PID layer on one or more surfaces of the multilayer dielectric-metal structure that are adjacent to the one or more sidewalls of the multilayer dielectric-metal structure.