Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a first semiconductor die comprising a first semiconductor die top side and a first semiconductor die bottom side;
• a second semiconductor die comprising a second semiconductor die top side and a second semiconductor die bottom side;
• a low-density substrate comprising:
• a low-density substrate dielectric material comprising a low-density substrate dielectric material top side and a low-density substrate dielectric material bottom side;
• and
• low-density substrate conductive vias extending vertically through the low-density substrate dielectric material, wherein each of the low-density substrate conductive vias comprises a respective low-density substrate conductive via top side;
• a high-density patch in the low-density substrate, the high-density patch comprising:
• a high-density patch top side, a high-density patch bottom side, and a high-density patch lateral side that extends between the high-density patch top side and the high-density patch bottom side;
• a high-density patch redistribution structure comprising a high-density patch redistribution structure top side providing at least a portion of the high-density patch top side and a high-density patch redistribution structure lateral side providing at least a portion of the high-density patch lateral side;
• and
• patch interconnect structures protruding above the high-density patch redistribution structure top side, wherein each of the patch interconnect structures comprises a respective patch interconnect structure top side that is coplanar with the low-density substrate conductive via top sides and the low-density substrate dielectric material top side;
• first interconnects that electrically couple the first semiconductor die bottom side and the second semiconductor die bottom side to the patch interconnect structures;
• and
• second interconnects that electrically couple the first semiconductor die bottom side and the second semiconductor die bottom side to the low-density substrate.

A method of manufacturing an electronic device, the method comprising:

• providing conductive pads and low-density pillars along an upper side of a first carrier;
• coupling a high-density patch to the conductive pads along the upper side of the first carrier;
• encapsulating the high-density patch and the low-density pillars in a molding compound to form a low-density substrate;
• electrically coupling a first semiconductor die and a second semiconductor die to the high-density patch of the low-density substrate via first interconnect structures;
• and
• electrically coupling the first semiconductor die and the second semiconductor die to the low-density pillars of the low-density substrate via second interconnect structures.