Semiconductor device including electric fuse and resistor elements and manufacturing method thereof

A method of manufacturing a semiconductor device, comprising:

• forming a first wiring;
• forming a first metal film having a first portion, a second portion arranged on one end of the first portion and a third portion arranged on the other end of the first portion in an upper layer of the first wiring;
• forming a second metal film separately from the first metal film in an upper layer of the first wiring;
• and
• forming a second wiring in an upper layer of the first metal film and the second metal film,
• wherein a material of each of the first metal film and the second metal film includes silicon metal or nickel chromium,
• wherein the first metal film is formed such that each of at least one part of the second portion and at least one part of the third portion has a wiring width larger than a wiring width of the first portion, and
• wherein the first metal film and the second metal film are formed at the same time.