Semiconductor device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorCheng Yan JI
Life of this patent
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Abstract
A manufacturing method of a semiconductor device includes depositing, using a first atomic layer deposition, a first thin poly silicon layer on an active area, in which the active area includes a trench; depositing, using a second atomic layer deposition, a second thin poly silicon layer on the active area; and depositing, using a chemical vapor deposition, a poly silicon layer on the active area to form a poly silicon structure, in which a gas for the chemical vapor deposition includes disilane, a thickness of the poly silicon layer in a bottom of the trenches is substantially zero.
Claims20
A manufacturing method of a semiconductor device, comprising:
- depositing, using a first atomic layer deposition, a first thin poly silicon layer on an active area, wherein the active area comprises a trench;
- depositing, using a second atomic layer deposition, a second thin poly silicon layer on the active area;
- and
- depositing, using a chemical vapor deposition, a poly silicon layer on the active area to form a poly silicon structure, wherein a gas for the chemical vapor deposition comprises disilane, a thickness of the poly silicon layer in a bottom of the trenches is substantially zero.
A manufacturing method of a semiconductor device, comprising:
- depositing, using a first atomic layer deposition, a first thin poly silicon layer on an active area, wherein the active area comprises a trench, a gas used in the first atomic layer deposition comprises dichlorosilane;
- depositing, using a second atomic layer deposition, a second thin poly silicon layer on the active area;
- and
- depositing, using a chemical vapor deposition, a poly silicon layer on the active area to form a poly silicon structure, wherein a gas for the chemical vapor deposition comprises disilane.
A semiconductor device, comprising:
- a substrate, wherein the substrate comprises an active area, the active area comprises a trench;
- and
- a poly silicon layer located on the active area, wherein a thickness of the poly silicon layer gradually shrinks from a top portion of a sidewall of the poly silicon layer to a bottom portion of the sidewall of the poly silicon layer.
Dependencies are inferred from the claim text.