US 2026/0076171 A1 · MEMORY DEVICE INCLUDING CONDUCTIVE CONTACTS WITH MULTIPLE LINERS

Abstract

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes levels of dielectric materials interleaved with levels of conductive materials, the levels of conductive materials including a first conductive level and a second conductive level; a memory cell string including a pillar extending in a direction from the first conductive level to the second conductive level, the second conductive level including a side wall; a conductive contact extending in the direction from the first conductive level to the second conductive level and contacting the second conductive level; a first dielectric material between the first conductive level and the conductive contact, the first dielectric material having a first dielectric constant; and a second dielectric material between the first dielectric material and the conductive contact, the second dielectric material having a second dielectric constant, wherein the second dielectric constant is greater than the first dielectric constant.

Claims20

Dependent claims

An apparatus comprising:

a first region including a memory cell pillar, and control gates associated with the memory cell pillar;
a second region including levels of first materials and levels of second materials interleaved with the levels of first materials;
a conductive contact located in the second region and extending through a first number of the levels of first materials and a first number of the levels of second materials, the first conductive contact electrically coupled to a control gate of the control gates;
a first dielectric structure between the first conductive contact and the first number of the levels of second materials;
and
a second dielectric structure between the first dielectric structure and the first conductive contact.

3 more elements

An apparatus comprising:

a first memory cell block including:
a first memory cell pillar and first control gates associated with the first memory cell pillar;
levels of first materials and levels of second materials interleaved with the levels of first materials;
a first conductive contact extending through a number of the levels of first materials and a number of the levels of second materials, the first conductive contact electrically coupled to a first control gate of the first control gates;
and
a first support pillar adjacent the first conductive contact;
a second memory cell block including:
a second memory cell pillar and second control gates associated with the second memory cell pillar;
additional levels of first materials and additional levels of second materials interleaved with the additional levels of first materials;
a second conductive contact extending through a number of the additional levels of first materials and a number of the additional levels of second materials, the second conductive contact electrically coupled to a second control gate of the second control gates;
and
a second support pillar adjacent the second conductive contact;
and
a dielectric structure between the first memory cell block and the second memory cell block, wherein the first support pillar is between the dielectric structure and the first conductive contact, and the second support pillar is between the dielectric structure and the second conductive contact.

11 more elements

Dependencies are inferred from the claim text.

Memory device including conductive contacts with multiple liners

Life of this patent

Memory device including conductive contacts with multiple liners

Life of this patent

Abstract

Claims20