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US 2026/0076167 A1Published application
Interconnect structure for semiconductor device with airgap
AssigneeInternational Business Machines Corporation
InventorsAbir Shadman, Koichi Motoyama, Shay Reboh, Nicholas Anthony Lanzillo
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Abstract
A semiconductor device includes a substrate, a plurality of metal lines on the substrate, a protuberance layer formed on upper portions of sidewalls of the metal lines, and a liner layer formed between the metal lines and between the protuberance layer. The liner layer connects the protuberance layer, and an airgap exists in the liner layer below a bottom surface of the protuberance layers.
Claims20
A semiconductor device comprising:
- a substrate;
- a plurality of metal lines on the substrate;
- a protuberance layer formed on upper portions of sidewalls of the metal lines;
- and
- a liner layer formed between the metal lines and between the protuberance layer, the liner layer connecting the protuberance layer,
- wherein an airgap exists in the liner layer below a bottom surface of the protuberance layer.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a plurality of metal lines on a substrate;
- forming a protuberance layer on upper portions of sidewalls of the metal lines;
- and
- forming a liner layer between the metal lines and between the protuberance layer, the liner layer connecting the protuberance layer,
- wherein an airgap exists in the liner layer below a bottom surface of the protuberance layer.
2 more elements
Dependencies are inferred from the claim text.