Cell structure with intermediate metal layers for power supplies
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Chun Tien, Chih-Liang Chen, Hui-Zhong Zhuang, Shun Li Chen, Ting Yu Chen
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Chun Tien, Chih-Liang Chen, Hui-Zhong Zhuang, Shun Li Chen, Ting Yu Chen
Estimating the term…
A cell on an integrated circuit is provided. The cell includes: a fin structure; an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure; and a first intermediate gate connection metal track disposed in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, the first intermediate gate connection metal track being connected to the intermediate fin structure connection metal track. A first power supply terminal is connected to the first intermediate gate connection metal track.
A cell on an integrated circuit, comprising:
A cell assembly on an integrated circuit, comprising:
A method of fabricating a semiconductor structure on an integrated circuit, comprising:
Dependencies are inferred from the claim text.