Frontside via within single diffusion break for backside power rail

A method for fabrication of a semiconductor device, the method comprising:

• forming a first source/drain region;
• forming a second source/drain region;
• forming a diffusion break between the first source/drain region and the second source/drain region;
• forming an interconnect within the diffusion break;
• and
• establishing a connection between a frontside of the semiconductor device and a backside of the semiconductor device via the interconnect.

A semiconductor device, comprising:

• a first source/drain region;
• a second source/drain region;
• a single diffusion break (SDB) between the first source/drain region and the second source/drain region;
• and
• a frontside via within the SDB, wherein:
• one side of frontside via is connected to a frontside contact over the first source/drain region, and
• the frontside via is connected to a backside power delivery network (BSPDN).