Interconnect structure with hybrid barrier layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Wei Li, Shin-Yi Yang, Ming-Han Lee, Shau-Lin Shue
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Wei Li, Shin-Yi Yang, Ming-Han Lee, Shau-Lin Shue
Estimating the term…
The present disclosure relates to an integrated chip including a lower conductive wire within a first dielectric layer over a substrate. A second dielectric layer is over the first dielectric layer. A conductive via is over the lower conductive wire and within the second dielectric layer. A conductive liner layer lines sidewalls of the via. A barrier layer lines sidewalls of the conductive liner layer and lines sidewalls of the second dielectric layer. The conductive liner layer is laterally separated from the second dielectric layer by the barrier layer. The conductive liner layer vertically extends between sidewalls of the barrier layer from a bottom surface of the conductive via to a top surface of the lower conductive wire.
An integrated chip comprising:
An integrated chip comprising:
An integrated chip comprising:
Dependencies are inferred from the claim text.