Split via structure for semiconductor device packaging

A method of forming a semiconductor device assembly, comprising:

• providing a substrate;
• providing a first split via on the substrate, the first split via including a first via land that is disposed on a surface of the substrate and that has a first footprint with a half-moon shape with a first radius of curvature, and a first micro via that passes through the substrate and that has a circular cross-sectional shape with a first diameter, wherein the first micro via is disposed within the first footprint;
• and
• forming a second split via on the substrate, the second split via including a second via land that is disposed on the surface of the substrate and that has a second footprint with the half-moon shape with the first radius of curvature, and a second micro via that passes through the substrate and that has the circular cross-sectional shape with the first diameter, wherein the second micro via is disposed within the second footprint,
• wherein the first via land and the second via land are disposed entirely within a circular region having the first radius of curvature.

A method of forming a semiconductor device assembly, comprising:

• providing a substrate;
• forming a first via land on a surface of the substrate, the first via land having a first footprint with a half-moon shape with a first radius of curvature;
• forming a second via land on a surface of the substrate, the second via land having a second footprint with a half-moon shape with the first radius of curvature;
• forming a first via that passes through the substrate and that has a second radius of curvature, wherein the first via is vertically aligned with and electrically coupled to the first via land;
• and
• forming a second via that passes through the substrate and that has the second radius of curvature, wherein the second via is vertically aligned with and electrically coupled to the second via land,
• wherein the first via land and the second via land are reflectively symmetric and isolated by a first gap.