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US 2026/0076126 A1Published application
Semiconductor structure and manufacturing method of semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Hsun Lin, Chih-Hsiang Yao
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Abstract
A semiconductor structure and a manufacturing method of a semiconductor structure are provided. The semiconductor structure includes a scribe line region. The scribe line region includes a test region and a dicing region adjacent to the test region. The test region includes an active element. The dicing region includes at least one layer having a plurality of patterns.
Claims20
A semiconductor structure, comprising:
- a scribe line region comprising:
- a test region comprising an active element;
- and
- a dicing region adjacent to the test region and comprising at least one layer having a plurality of patterns.
1 more element
A semiconductor structure, comprising:
- a substrate;
- a plurality of insulators disposed on the substrate;
- a plurality of strained material structures disposed on the substrate and separated from each other by the plurality of insulators;
- and
- a replacement dielectric pattern disposed on the plurality of insulators, wherein an extension direction of the replacement dielectric pattern is intersected with an extension direction of the plurality of insulators.
2 more elements
A manufacturing method of a semiconductor structure, comprising:
- forming an active element in a test region of a scribe line region;
- and
- forming at least one layer having a plurality of patterns in a dicing region of the scribe line region, wherein the dicing region is adjacent to the test region.
Dependencies are inferred from the claim text.