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US 2026/0076119 A1Published application
Method for etching features using hf gas
AssigneeLam Research Corporation
InventorsEric A. HUDSON, Leonid BELAU, Thorsten LILL
Life of this patent
Estimating the term…
Abstract
START PLACE STACK IN CHAMBER ON SUPPORT COOL SUPPORT FLOW HF ETCH GAS INTO CHAMBER FORUM ETCH GAST INTO PLASMA EXPOSE STACK TO PLASMA SELECTIVELY ETCH STACK REMOVE STACK FROM CHAMBER
Claims18
A method for etching features in a stack containing at least one of silicon oxide and silicon nitride below a mask, comprising:
- cooling a substrate support for supporting the stack in an etch chamber to a temperature below 0° C;
- providing an etch gas comprising a halogen containing component and HF gas;
- generating a plasma from the etch gas;
- and
- selectively etching features in the stack with respect to the mask.
2 more elements
An apparatus for processing a stack over a substrate with at least one of a silicon oxide layer and silicon nitride layer below a mask, comprising:
- an etch chamber;
- a substrate support for supporting a substrate inside the etch chamber;
- a temperature controller for controlling a temperature of the substrate support;
- an electrode for providing RF power inside the etch chamber;
- an RF power source for providing RF power to the electrode;
- and
- a gas source that provides an etch gas into the etch chamber, comprising:
- a halogen containing component source;
- and
- an HF gas source.
7 more elements
Dependencies are inferred from the claim text.