Method for etching features in a stack
AssigneeLam Research Corporation
InventorsLeonid BELAU, Eric A. HUDSON
Life of this patent
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Abstract
A method for etching features in a stack comprising a silicon oxide layer below a mask is provided. A substrate support for supporting the stack in an etch chamber is cooled to a temperature below 0° C. An etch gas comprising a halogen containing component and a phosphorous containing component is provided. A plasma is generated from the etch gas. A bias is provided to accelerate ions from the plasma to the stack. Features are selectively etched in the stack with respect to the mask.
Claims20
A method for etching features in a stack comprising a silicon oxide layer below a mask, comprising:
- cooling a substrate support for supporting the stack in an etch chamber to a temperature below 0° C.;
- providing an etch gas comprising a halogen containing component and a phosphorous containing component;
- generating a plasma from the etch gas;
- providing a bias to accelerate ions from the plasma to the stack;
- and
- selectively etching features in the stack with respect to the mask.
An apparatus for processing a stack over a substrate with at least one silicon oxide layer, comprising:
- an etch chamber;
- a substrate support for supporting a substrate inside the etch chamber;
- a temperature controller for controlling a temperature of the substrate support;
- an electrode for providing RF power inside the etch chamber;
- an RF power source for providing RF power to the electrode;
- and
- a gas source that provides an etch gas into the etch chamber, the gas source comprising:
- a halogen containing component source;
- and
- a phosphorous containing component source.
Dependencies are inferred from the claim text.