Method for doping molybdenum disulfide thin film with aluminum nitride, and aluminum nitride for the same

A semiconductor manufactured by doping, the semiconductor in which:

• a molybdenum disulfide (MoS2) layer is formed on a substrate;
• an aluminum nitride (AlOxNy) thin film is sputtered and deposited on a surface of the molybdenum disulfide (MoS2) layer;
• and
• electrons are injected into the molybdenum disulfide (MoS2) through deposition of the aluminum nitride thin film.

A semiconductor comprising:

• a molybdenum disulfide (MoS2) layer formed on a substrate;
• and
• an aluminum nitride (AlOxNy) thin film sputtered and deposited on a surface of the molybdenum disulfide (MoS2) layer,
• wherein doping is carried out by injecting electrons into the molybdenum disulfide (MoS2) through deposition of the aluminum oxynitride thin film, so that partial doping is possible using a photoresist.