Substrate chucking with multiscale wafer stress modulation

A system comprising:

• a memory;
• and
• a processing device communicatively coupled to the memory, wherein the processing device causes performance of operations comprising:
• decomposing a profile of a deformation of a substrate into a plurality of harmonics;
• identifying, using chuckability reference data, one or more harmonics of the plurality of harmonics having an amplitude above a maximum amplitude capable of being flattened by a predetermined clamping pressure exerted on the substrate by a chuck;
• determining, based at least on a subset of the one or more harmonics, settings of a stress-modulation beam;
• forming a stress-compensation layer (SCL) on the substrate, wherein the SCL causes a modification of the deformation of the substrate;
• and
• irradiating the SCL with the stress-modulation beam, wherein the stress-modulation beam causes a reduction of the deformation of the substrate.

A semiconductor manufacturing system comprising one or more processing chambers, the semiconductor manufacturing system to:

• decompose a profile of a deformation of a substrate into a plurality of harmonics;
• identify, using chuckability reference data, one or more harmonics of the plurality of harmonics having an amplitude above a maximum amplitude capable of being flattened by a predetermined clamping pressure exerted on the substrate by a chuck;
• determine, based at least on a subset of the one or more harmonics, settings of a stress-modulation beam;
• form a stress-compensation layer (SCL) on the substrate, wherein the SCL causes a modification of the deformation of the substrate;
• and
• irradiate the SCL with the stress-modulation beam, wherein the stress-modulation beam causes a reduction of the deformation of the substrate.