Doped multi-layer structures for stack uniformity in devices, and related methods and apparatus

A method of processing a substrate, comprising:

• flowing a first gas and a dopant precursor to form a doped SiGe layer, the doped SiGe layer comprising a dopant in a range from about 0.1 at% to about 3 at%;
• ceasing the flow of the dopant precursor;
• and
• flowing a second gas to form a silicon layer on the doped SiGe layer, the silicon layer and the doped SiGe layer forming at least part of a multi-layer structure.

A non-transitory computer readable medium comprising instructions that when executed cause a plurality of operations to be conducted, the plurality of operations comprising:

• flowing a first gas and a dopant precursor to form a doped SiGe layer;
• flowing a second gas to form a silicon layer on the doped SiGe layer;
• and
• flowing an etch gas using an etch temperature that is within a range of 35 degrees Celsius to 105 degrees Celsius.