Semiconductor Device and Method of Direct Wafer Bonding Between Semiconductor Layer Containing Similar WBG Materials

A method of making a semiconductor device, comprising:

• providing a substrate comprising a first semiconductor material;
• forming a sacrificial layer comprising a second semiconductor material dissimilar from the first semiconductor material in contact with the substrate;
• bonding a first semiconductor layer comprising the second semiconductor material to the sacrificial layer with defects induced from the dissimilar first semiconductor material and second semiconductor material being formed in the sacrificial layer;
• removing the substrate and sacrificial layer leaving the first semiconductor layer substantially defect-free;
• and
• bonding a second semiconductor layer comprising the second semiconductor material to the first semiconductor layer.

A semiconductor device, comprising:

• a structured substrate comprising a first semiconductor material and a patterned structure formed as a first surface of the structured substrate;
• a sacrificial layer comprising a second semiconductor material dissimilar from the first semiconductor material, wherein a first surface of the sacrificial layer contacts the first surface of the structured substrate;
• and
• a semiconductor layer comprising the second semiconductor material bonded to a second surface of the sacrificial layer opposite the first surface of the sacrificial layer with defects induced from the dissimilar first semiconductor material and second semiconductor material being formed in the sacrificial layer.