Semiconductor structure including resistive random access memory and double capacitor and manufacturing method thereof

A manufacturing method of a semiconductor structure including a resistive random access memory (RRAM) and a double capacitor, comprising:

• providing a substrate, wherein a cell region and a capacitor region are defined on the substrate and located beside the cell region;
• forming a resistive random access memory located in the cell region, wherein the resistive random access memory comprises a variable resistance layer;
• and
• forming a double capacitor structure in the capacitor region, wherein the double capacitor structure comprises a lower capacitor structure and an upper capacitor structure, and the material of a first high dielectric constant layer in the lower capacitor structure is the same as the material of the variable resistance layer of the resistive random access memory.