Area-selective josephson junction tunnel barrier formation and qubit cap integration

Abstract

A method of manufacturing a semiconductor device is provided. The method includes forming an opening in a sacrificial layer to expose a first superconducting electrode below the sacrificial layer. An inhibitor film is formed selectively on the sacrificial layer while leaving the first superconducting electrode exposed. A tunnel barrier is formed on the first superconducting electrode. A second superconducting electrode is formed on the tunnel barrier. The sacrificial layer is removed to expose a sidewall of the second superconducting electrode. A capping layer is formed on the sidewall of the second superconducting electrode.

Dependencies are inferred from the claim text.