Oriented Metal Electrode Unit and Preparation Methods and Applications Thereof

Abstract

The present invention provides an oriented metal electrode unit and preparation methods and applications thereof, relating to the technical field of semiconductor devices, comprising: a Si substrate covered with an amorphous SiO2 layer; a buffer layer, covered on said SiO2 layer, comprising Ta, Cr, TiN, TaN or MgO; a seed layer, covered on said buffer layer, comprising A3BN, wherein A=Cu or Fe; B=Pd or Pt; or MnxN1-x, wherein 0<x<1; a metal electrode layer, prepared on the basis of said seed layer, having a (00l) crystalline orientation; said buffer layer, said seed layer and said metal electrode layer having consistent lattice constants, solving the problem of existing semiconductor devices having poor performance in obtaining crystalline metal electrodes on amorphous SiO2 layers.

Dependencies are inferred from the claim text.