Light-emitting diode chip structures and related methods

A method for forming a light-emitting diode (LED) chip, the method comprising:

• forming an active LED structure comprising an n-type layer, a p-type layer, and an active layer between the n-type layer and the p-type layer;
• forming a dielectric reflective layer on the active LED structure, the dielectric reflective layer comprising an etch stop layer and at least one dielectric layer on the etch stop layer;
• etching a first opening through the at least one dielectric layer to the etch stop layer;
• and
• removing portions of the etch stop layer within the first opening.

A light-emitting diode (LED) chip comprising:

• an active LED structure comprising an n-type layer, a p-type layer, and an active layer between the n-type layer and the p-type layer, the active LED structure forming a mesa bounded by a mesa sidewall;
• a dielectric reflective layer on the active LED structure;
• a first n-contact interconnect extending through the dielectric reflective layer from a top surface of the mesa, the first n-contact interconnect being electrically coupled with the n-type layer;
• a second n-contact interconnect extending through the dielectric reflective layer outside a perimeter edge of the active LED structure defined by the mesa sidewall, the second n-contact interconnect being electrically coupled with the n-type layer;
• a first reflective layer interconnect extending through the dielectric reflective layer from the top surface of the mesa, the first reflective layer interconnect being electrically coupled with the p-type layer;
• and
• a second reflective layer interconnect extending through the dielectric reflective layer from the top surface of the mesa, the second reflective layer interconnect being electrically coupled with the p-type layer, wherein the second reflective layer interconnect is closer to the second n-contact interconnect than the first reflective layer interconnect, and the second reflective layer interconnect is larger than the first reflective layer interconnect.