US 2026/0075971 A1 · IMAGE SENSOR

Abstract

An image sensor may include a substrate having a first surface and a second surface, which are opposite to each other, and including a plurality of photoelectric conversion parts, a first isolation structure disposed in the substrate to separate the photoelectric conversion parts from each other, an oxide structure on the first isolation structure, and a micro lens on the oxide structure. The first isolation structure and the micro lens may be vertically overlapped with each other, and the first isolation structure may include a first isolation conductive pattern. The oxide structure may be in contact with the first isolation conductive pattern, and a bottom surface of the oxide structure may be placed between the first and second surfaces of the substrate.

Claims20

Dependent claims

An image sensor, comprising:

a substrate having a first surface and a second surface opposite to one another, wherein the substrate comprises a first photoelectric conversion region and a second photoelectric conversion region;
a first isolation structure arranged in the substrate between the first photoelectric conversion region and the second photoelectric conversion region;
an oxide structure on the first isolation structure;
and
a micro lens on the oxide structure,
wherein the first isolation structure and the micro lens overlap along a vertical direction,
wherein the first isolation structure comprises a first isolation conductive pattern,
wherein the oxide structure is in contact with the first isolation conductive pattern, and
wherein the oxide structure is at least partially extended into the first isolation structure.

6 more elements

An image sensor, comprising:

a substrate including a first pixel group and a second pixel group adjacent to one another, each of the first and second pixel groups comprising a plurality of photoelectric conversion regions,
a first isolation structure in the substrate between the first pixel group and the second pixel group;
a second isolation structure in the substrate between a first photoelectric conversion region of the first pixel group and a second photoelectric conversion region of the first pixel group, and between a first photoelectric conversion region of the second pixel group and a second photoelectric conversion region of the second pixel group;
and
an oxide structure on the second isolation structure,
wherein the first isolation structure comprises a first isolation conductive pattern and the second isolation structure comprises a second isolation conductive pattern,
wherein a thickness of the second isolation conductive pattern in a vertical direction is smaller than a thickness of the first isolation conductive pattern in the vertical direction,
wherein the oxide structure comprises a first portion and a second portion protruding from the first portion,
wherein the first portion is in contact with the first isolation conductive pattern,
wherein the second portion is in contact with the second isolation conductive pattern, and
wherein a thickness of the second portion in the vertical direction is in a range from 0.5μm to 1.5 μm.

8 more elements

Dependencies are inferred from the claim text.

Image sensor

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Image sensor

Life of this patent

Abstract

Claims20