Semiconductor device and method for manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a first active pattern on a substrate;
• forming a second active pattern on the first active pattern, wherein the first active pattern is disposed between the substrate and the second active pattern;
• forming gate dielectric films respectively on the first active pattern and the second active pattern;
• forming first metal oxide films respectively on the gate dielectric film on the first active pattern and on the gate dielectric film on the second active pattern;
• selectively removing the first metal oxide film on the second active pattern;
• forming second metal oxide films respectively on the first metal oxide film on the first active pattern and on the gate dielectric film on the second active pattern;
• forming a first work function conductive film on the second metal oxide film on the first active pattern;
• forming a second work function conductive film on the second metal oxide film on the second active pattern;
• and
• forming a filling conductive film on the substrate, wherein the filling conductive film surrounds the first work function conductive film and the second work function conductive film.

A method of manufacturing a semiconductor device, comprising:

• forming a first active pattern on a substrate;
• forming a second active pattern on the first active pattern, wherein the first active pattern is disposed between the substrate and the second active pattern;
• forming gate dielectric films respectively on the first active pattern and the second active pattern;
• forming first metal oxide films respectively on the gate dielectric film on the first active pattern and on the gate dielectric film on the second active pattern;
• selectively removing the first metal oxide film on the second active pattern;
• forming second metal oxide films respectively on the first metal oxide film on the first active pattern and on the gate dielectric film on the second active pattern;
• forming first metal films respectively on the second metal oxide film on the first active pattern and on the second metal oxide film on the second active pattern;
• selectively removing the first metal film on the second active pattern;
• forming second metal films respectively on the first metal film on the first active pattern and on the second metal oxide film on the second active pattern;
• and
• forming a filling conductive film on the substrate, wherein the filling conductive film surrounds the second metal film on the first active pattern and the second metal film on the second active pattern.

A method of manufacturing a semiconductor device, comprising:

• forming a first active pattern on a substrate;
• forming a second active pattern on the first active pattern, wherein the first active pattern is disposed between the substrate and the second active pattern;
• forming gate dielectric films respectively on the first active pattern and the second active pattern;
• forming first metal oxide films respectively on the gate dielectric film on the first active pattern and on the gate dielectric film on the second active pattern;
• selectively removing the first metal oxide film on the second active pattern;
• forming second metal oxide films respectively on the first metal oxide film on the first active pattern and on the gate dielectric film on the second active pattern;
• forming first metal films respectively on the second metal oxide film on the first active pattern and on the second metal oxide film on the second active pattern;
• forming second metal films respectively on the first metal film on the first active pattern and on the first metal film on the second active pattern;
• forming a first filling conductive film on the substrate, wherein the first filling conductive film covers the second metal film on the first active pattern and exposes the second metal film on the second active pattern;
• removing the second metal film on the second active pattern;
• forming a separation insulating film on the first filling conductive film, wherein the separation insulating film is disposed between the first active pattern and the second active pattern;
• forming a third metal layer on the first metal film on the second active pattern;
• and
• forming a second filling conductive film on the separation insulating layer, wherein the second filling conductive film surrounds the third metal layer on the second active pattern.