Semiconductor device including vertically arranged transistors

A semiconductor device comprising:

• a first substrate;
• a first active pattern extending in a first direction on the first substrate, the first active pattern comprising a plurality of first sheet patterns spaced apart from each other;
• a first gate structure extending in a second direction intersecting with the first direction, wherein the first gate structure surrounds the plurality of first sheet patterns;
• a first high-k insulating film between the first gate structure and the plurality of first sheet patterns, the first high-k insulating film comprising a first dopant;
• a first gate insulating film between the plurality of first sheet patterns and the first high-k insulating film;
• a second active pattern extending in the first direction and spaced apart from the first active pattern in a third direction, wherein the third direction intersects with the first and the second directions, and wherein the second active pattern comprises a plurality of second sheet patterns spaced apart from each other in the third direction;
• a second gate structure extending in the second direction, wherein the second gate structure surrounds the plurality of second sheet patterns;
• and
• a second high-k insulating film between the second gate structure and the plurality of second sheet patterns, the second high-k insulating film comprising a second dopant different from the first dopant,
• wherein a concentration of the first dopant decreases as a distance from an interface between the first gate insulating film and the first high-k insulating film increases in the third direction, and
• wherein a concentration of the second dopant is constant in the third direction.

A semiconductor device comprising:

• a first substrate;
• a first active pattern extending in a first direction on the first substrate, the first active pattern comprising a first lower pattern and a plurality of first sheet patterns spaced apart from each other on the first lower pattern;
• a first gate structure extending in a second direction intersecting with the first direction, wherein the first gate structure surrounds the plurality of first sheet patterns;
• a first high-k insulating film between the first gate structure and the plurality of first sheet patterns;
• a first gate insulating film between the plurality of first sheet patterns and the first high-k insulating film;
• a gate capping pattern on an upper surface of the first gate structure;
• a bonding layer on the gate capping pattern;
• a second substrate on the bonding layer;
• a second active pattern extending in the first direction on the second substrate, the second active pattern comprising a second lower pattern and a plurality of second sheet patterns spaced apart from each other on the second lower pattern;
• a second gate structure extending in the second direction, wherein the second gate structure surrounds the plurality of second sheet patterns;
• a second high-k insulating film between the second gate structure and the plurality of second sheet patterns;
• and
• a second gate insulating film between the plurality of second sheet patterns and the second high-k insulating film,
• wherein the first high-k insulating film comprises a first high-k material and a first dopant,
• wherein the second high-k insulating film comprises a second high-k material different from the first high-k material and a second dopant different from the first dopant,
• wherein a concentration of the first dopant decreases as a distance from an interface between the first gate insulating film and the first high-k insulating film increases in a third direction,
• wherein the third direction is perpendicular to an upper surface of the first substrate, and
• wherein a concentration of the second dopant is constant in the third direction.