Semiconductor device with air spacers and method for fabricating the same

A semiconductor device, comprising:

• a substrate and a gate structure positioned on the substrate;
• a plurality of inner spacer layers positioned on sidewalls of the gate structure and a plurality of outer spacer layers positioned on the plurality of inner spacer layers;
• a plurality of air gaps positioned between the plurality of inner spacer layers and the plurality of outer spacer layers;
• a plurality of recesses recessed from a top surface of the substrate, adjacent to the gate structure, and defining a channel region between the plurality of recesses and under the gate structure;
• a bottom dielectric layer positioned on the substrate, filling the plurality of recesses, and laterally surrounding the plurality of outer spacer layers;
• a bottom capping layer positioned on the bottom dielectric layer, the plurality of inner spacer layers, the plurality of air gaps, the plurality of outer spacer layers, and the gate structure;
• a conductive layer positioned on the bottom capping layer and comprising a plurality of conductive wires;
• a top capping layer positioned on the conductive layer;
• and
• a plurality of air spacers positioned between the plurality of conductive wires.