Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first electrode;
• a semiconductor portion provided on the first electrode and having a trench formed therein, the trench extending along a first direction, the semiconductor portion including
• a first semiconductor layer of a first conductivity type connected to the first electrode,
• a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, and
• a third semiconductor layer of the first conductivity type provided on the second semiconductor layer;
• a gate electrode disposed in the trench, the gate electrode facing the second semiconductor layer and the third semiconductor layer along a second direction orthogonal to the first direction, the gate electrode having a facing surface formed at a position facing the third semiconductor layer, a distance between the facing surface and the third semiconductor layer in the second direction increasing as it extends upward;
• a first insulating portion continuously provided on the semiconductor portion and inside the trench;
• a second insulating portion provided on the gate electrode, a material of the second insulating portion being different from a material of the first insulating portion;
• and
• a second electrode provided on the semiconductor portion and connected to the second semiconductor layer and the third semiconductor layer.