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US 2026/0075907 A1Published application
Semiconductor device and method for fabricating the same
AssigneeMarlin Semiconductor Limited
InventorsTe-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang
Life of this patent
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Abstract
A semiconductor device includes a gate structure on a substrate, an offset spacer adjacent to the gate structure, a main spacer around the offset spacer, a source/drain region adjacent to two sides of the main spacer, a contact etch stop layer (CESL) adjacent to the main spacer, and an interlayer dielectric (ILD) layer around the CESL. Preferably, a dielectric constant of the offset spacer is higher than a dielectric constant of the main spacer.
Claims7
A semiconductor device, comprising:
- a gate structure on a substrate;
- a main spacer around the gate structure;
- a contact etch stop layer (CESL) adjacent to the main spacer, wherein the main spacer and the CESL comprise a same material having oxygen;
- and
- an interlayer dielectric (ILD) layer around the CESL.
2 more elements
Dependencies are inferred from the claim text.